Sputtered Cu is utilized in the semiconductor packaging process to form the Under Bump Metallization (UBM) layer, which provides uniform current density throughout the entire wafer as the seed layer for the electroplating process of bump and redistribution layer (RDL). Insufficient UBM etching can lead to short circuits or leakage current, while over-etching can result in large undercuts of bumps or high CD loss of RDL, ultimately affecting the reliability of electronic devices.
CLC supplies a wide range of high-quality copper etchants for general RDL, copper pillar bump, and lead-free (LF) bump processes. Additionally, CLC offers Cu etchants for advanced semiconductor packaging processes such as fine line RDL, microbump, Cu/Ni/Au RDL, and Ni/Au pad devices, ensuring that the company can meet the evolving needs of the industry.
| Type | Persulfate series | Hydrogen peroxide-phosphoric acid series | Organic acid series |
|---|---|---|---|
| Application | Cu RDL | RDL Copper Pillar Bump LF Bump |
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| Other Features | Fine Line RDL Microbump Cu/Ni/Au RDL Ni/Au Pad |
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