Ti Etchant

Sputtered Ti serves as the adhesive layer and diffusion barrier layer between sputtered Cu and the substrate in the UBM process of semiconductor packaging. Insufficient etching of Ti can lead to short circuits or leakage current, while over-etching can result in large undercuts that may affect the reliability of electronic devices.

Hydrofluoric acid was previously the most commonly used chemical for Ti etching in semiconductor processes, but it was discovered to cause higher damage rates to other metal layers in devices. CLC's fluoride series Ti etchants, on the other hand, suppress the etching rate for copper, aluminum, and LF solder.

For those concerned with fluoride disposal treatment or health hazards resulting from accidental exposure, CLC also provides alkaline hydrogen peroxide series Ti etchants that overcome the issue of abnormal heat up due to exothermic decomposition of hydrogen peroxide in alkaline solutions. This ensures process stability and industrial safety.

CLC has now expanded its range of Ti etchants to include low undercut options for advanced packaging processes with smaller critical dimensions (CD), such as fine line RDL and microbump devices, ensuring that the company is able to meet the diverse needs of its customers in the ever-changing semiconductor industry.